2008-2009 Annual Report on China's Semiconductor Power Devices Market
http://www.chinaccm.com 2009-4-30 16:31

Published:

April 2009

Format:

PDF

Price:

US$2400.00 Single User PDF

Pages:

Key Words:

Semiconductor Power Dev

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  • Executive Summary
  • Table of Contents

Report Highlights

In 2008, slack downstream demand had an impact on China's semiconductor power devices market. As traditional discrete devices got into the slow growth period, domestic vendors shifted to semiconductor power devices with higher added value. In Q4’08, Sino Microelectronics’ MOSFET production line was put into production. Homegrown vendors gradually turned from traditional MOSFET contract manufacturing to own brands. Yet due to their small enterprise size, the overall market situation has not changed much. Fairchild, ST and Vishay are still in the mainstream position. Local enterprises find it difficult to enter the IGBT market, which is still in the grip of international giants.
As energy conservation and high efficiency draw greater attention in complete-set products, power management IC, MOSFET and IGBT will remain bright spots in the semiconductor power devices market.
In the face of changes and challenges of competition and market, we release the 2008-2009 Annual Report on China's Semiconductor Power Devices Market, which helps vendors, investors and industry chains grasp more accurately laws governing the market's development and comb the development track of industry chain.
* In-depth, full and accurate research data: The report depicts changes in the market from the angle of market size, product structure, application structure and key product markets, and discerns the market's development direction.
* All-round and in-depth brand competition analysis: In addition to summing up enterprises' performance in the dimension of market segments, Competition strategy and SWOT analysis, we leverage its profound understanding of the semiconductor industry, to review the makings of success in the marketplace.
* Scientific and complete forecasts: Through regression modeling and expert verification in major market segments, the report examines related links in the industry, and presents valuable trend analysis and quantitative forecast result.


Table of Contents

Main Conclusions
Key Findings
I. Overview of the Global Power Devices Market in 2008
(I) Market Size & Growth
(II) Basic Characteristics
(III) Major Countries & Regions
1. USA
2. Europe
3. Japan
II. Overview of China's Power Devices Market in 2008
(I) Market Size & Growth
(II) Basic Characteristics
(III) Analysis on Market Structure
1. Product Structure
2. Application Structure
(IV) Brand Structure
III. Forecast of China's Power Devices Market, 2009-2011
(I) Forecast on the Size of China's Power Devices Market, 2009-2011
(II) Forecast on the Structure of China's Power Devices Market, 2009-2011
1. Product Structure
2. Application Structure
IV. Analysis on the Development Trend of China's Power Devices Market, 2009-2011
(I) Product Technology
(II) Price
(III) Channels
V. Research on the Market Segments of China's Power Devices Market in 2008
(I) MOSFET
1. Market Size & Growth
2. Voltage Structure
3. Application Structure
4. Packaging Structure
(II) IGBT
(III) Power Management IC
VI. Analysis on the Competition Situation in China's Power Devices Market
(I) Overall Competition Situation
(II) Leading Vendors' Competition Strategies & SWOT Analysis
1. Fairchild
2. ST
3.Vishay
4. ...
VII. Recommendations

List of Tables
Size of China's Power Devices Market, 2006-2008
Product Structure of China's Power Devices Market in 2008
Application Structure of China's Power Devices Market in 2008
Size of China's MOSFET Market in 2008
Application Structure of China's MOSFET Market in 2008
Voltage Structure of China's MOSFET Market in 2008

List of Figures
Size of the Global Power Devices Market, 2006-2008
Brand Structure of China's Power Devices Market in 2008
Brand Structure of China's MOSFET Market in 2008
Brand Structure of China's IGBT Market in 2008
...


 


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